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may 2011 doc id 018846 rev 1 1/13 13 STP120N4F6 n-channel 40 v, 3.8 m , 80 a, to-220 stripfet? vi deepgate? power mosfet features standard threshold drive 100% avalanche tested application switching applications automotive description this device is a 40 v n-channel stripfet? vi power mosfet based on the st?s proprietary stripfet? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. figure 1. internal schematic diagram order code v dss r ds(on) max. i d STP120N4F6 40 v 4.3 m 80 a (1) 1. current limited by package 1 2 3 to-220 !-v $4!"or ' 3 table 1. device summary order code marking package packaging STP120N4F6 120n4f6 to-220 tube www.st.com
contents STP120N4F6 2/13 doc id 018846 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STP120N4F6 electrical ratings doc id 018846 rev 1 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 40 v v gs gate-source voltage 20 v i d (1) 1. current limited by package drain current (continuous) at t c = 25 c 80 a i d (1) drain current (continuous) at t c = 100 c 80 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 110 w t stg storage temperature -55 to 175 c t j operating junction temperature table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case max 1.36 c/w r thj-amb thermal resistance junc tion-amb max 62.5 c/w table 4. thermal resistance symbol parameter value unit i ar (1) 1. pulse width limited by tj max avalanche current, repetitive or not-repetitive 40 a e as (2) 2. starting tj = 25 c, i d = 40 a, v dd = 25 v single pulse avalanche energy 394 mj
electrical characteristics STP120N4F6 4/13 doc id 018846 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = 20 v v ds = 20 v,tc = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 40 a 3.8 4.3 m table 6. dynamic symbol parameter test conditions min typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs = 0 v - 3850 650 350 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 20 v, i d = 80 a v gs = 10 v (see figure 14) - 65 20 16 - nc nc nc r g intrinsic gate resistance f = 1 mhz open drain - 1.5 -
STP120N4F6 electrical characteristics doc id 018846 rev 1 5/13 table 7. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 20 v, i d = 40 a, r g = 4.7 , v gs = 10 v (see figure 15) - 20 70 - ns ns t d(off) t f turn-off delay time fall time - 40 20 - ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 80 320 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 40 a, v gs = 0 -1.1v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s, v dd = 30 v (see figure 17) - 40 56 2.8 ns nc a
electrical characteristics STP120N4F6 6/13 doc id 018846 rev 1 2.1 electrical characteri stics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s tj=175c tc=25c s ingle p u l s e am0 8 627v1 i d 200 100 50 0 0 2 v d s (v) 4 (a) 1 3 5 250 3 00 5v 6v 4v v g s =10v 7 6 8 150 3 50 am0 8 62 8 v1 i d 150 100 50 0 0 2 v g s (v) 4 (a) 1 3 5 200 3 00 v d s = 2v am0 8 629v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0. 8 0 0. 8 5 0.90 0.95 1.00 1.05 175 1.10 1.15 am0 8 6 3 0v1 r d s (on) 3 .5 3 .0 2.5 2.0 i d (a) (m ) 20 40 4.0 4.5 v g s =10v 60 8 0 am0 8 6 3 1v1
STP120N4F6 electrical characteristics doc id 018846 rev 1 7/13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =20v i d = 8 0a 50 60 70 am0 8 6 3 2v1 c 1000 100 10 0.1 10 v d s (v) (pf) 1 ci ss co ss cr ss am0 8 6 33 v1 v g s (th) 0. 8 0.6 0.4 0.2 -75 t j (c) (norm) -25 1.0 75 25 125 1.2 175 am0 8 6 3 4v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 v g s =10v i d =40a 0 175 am0 8 6 3 5v1 v s d 20 i s d (a) (v) 10 50 3 0 40 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-55c t j =175c t j =25c 60 70 8 0 am0 8 6 3 6v1
test circuits STP120N4F6 8/13 doc id 018846 rev 1 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefo rm figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STP120N4F6 package mechanical data doc id 018846 rev 1 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack specifications, grade definitions and products status are available at: www.st.com . ecopack is an st trademark.
package mechanical data STP120N4F6 10/13 doc id 018846 rev 1 table 9. to-220 type a mechanical data dim. mm min. typ. max. a 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4.95 5.15 f 1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p 3.75 3.85 q 2.65 2.95
STP120N4F6 package mechanical data doc id 018846 rev 1 11/13 figure 19. to-220 type a drawing 00159 88 _typea_rev_ s
revision history STP120N4F6 12/13 doc id 018846 rev 1 5 revision history table 10. document revision history date revision changes 17-may-2011 1 first release
STP120N4F6 doc id 018846 rev 1 13/13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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